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supplement publication# 21356 rev: e amendment/ 0 issue date: march 12, 2002 am29lv800b known good die 8 megabit (1 m x 8-bit/512 k x 16-bit) cmos 3.0 volt-only, boot sector flash memory?die revision 2 distinctive characteristics single power supply operation ? 2.7 to 3.6 v for read, program, and erase operations ? ideal for battery-powered applications manufactured on 0.32 m process technology high performance ? 80, 90, or 120 ns access time low power consumption (typical values at 5mhz) ? 200 na automatic sleep mode current ? 200 na standby mode current ? 7 ma read current ? 15 ma program/erase current flexible sector architecture ? one 16 kbyte, two 8 kbyte, one 32 kbyte, and fifteen 64 kbyte sectors (byte mode) ? one 8 kword, two 4 kword, one 16 kword, and fifteen 32 kword sectors (word mode) ? supports full chip erase ? sector protection features: a hardware method of locking a sector to prevent any program or erase operations within that sector sectors can be locked in-system or via programming equipment temporary sector unprotect feature allows code changes in previously locked sectors unlock bypass program command ? reduces overall programming time when issuing multiple program command sequences top or bottom boot block configurations available embedded algorithms ? embedded erase algorithm automatically preprograms and erases the entire chip or any combination of designated sectors ? embedded program algorithm automatically writes and verifies data at specified addresses minimum 1,000,000 write cycle guarantee per sector compatibility with jedec standards ? pinout and software compatible with single- power supply flash ? superior inadvertent write protection data# polling and toggle bits ? provides a software method of detecting program or erase operation completion ready/busy# pin (ry/by#) ? provides a hardware method of detecting program or erase cycle completion erase suspend/erase resume ? suspends an erase operation to read data from, or program data to, a sector that is not being erased, then resumes the erase operation hardware reset pin (reset#) ? hardware method to reset the device to reading array data 20-year data retention at 125 c tested to datasheet specifications at temperature quality and reliability levels equivalent to standard packaged components
2 am29lv800b known good die supplement general description the am29lv800b in known good die (kgd) form is an 8 mbit, 3.0 volt-only flash memory. amd defines kgd as standard product in die form, tested for function- ality and speed. amd kgd products have the same reli- ability and quality as amd products in packaged form. am29lv800b features the am29lv800b is an 8 mbit, 3.0 volt-only flash memory organized as 1,048,576 bytes or 524,288 words. the word-wide data (x16) appears on dq15 ? dq0; the byte-wide (x8) data appears on dq7 ? dq0. to eliminate bus contention the device has separate chip enable (ce#), write enable (we#) and output enable (oe#) controls. the device requires only a single 3.0 volt power supply for both read and write functions. internally generated and regulated voltages are provided for the program and erase operations. no v pp is required for program or erase operations. the device can also be programmed in standard eprom programmers. the device is entirely command set compatible with the jedec single-power-supply flash standard . com- mands are written to the command register using stan- dard microprocessor write timings. register contents serve as input to an internal state-machine that con- trols the erase and programming circuitry. write cycles also internally latch addresses and data needed for the programming and erase operations. reading data out of the device is similar to reading from other flash or eprom devices. device programming occurs by executing the program command sequence. this initiates the embedded program algorithm ? an internal algorithm that auto- matically times the program pulse widths and verifies proper cell margin. the unlock bypass mode facili- tates faster programming times by requiring only two write cycles to program data instead of four. device erasure occurs by executing the erase command sequence. this initiates the embedded erase algorithm ? an internal algorithm that automati- cally preprograms the array (if it is not already pro- grammed) before executing the erase operation. during erase, the device automatically times the erase pulse widths and verifies proper cell margin. the host system can detect whether a program or erase operation is complete by observing the ry/by# pin, or by reading the dq7 (data# polling) and dq6 (toggle) status bits . after a program or erase cycle has been completed, the device is ready to read array data or accept another command. the sector erase architecture allows memory sectors to be erased and reprogrammed without affecting the data contents of other sectors. the device is fully erased when shipped from the factory. hardware data protection measures include a low v cc detector that automatically inhibits write opera- tions during power transitions. the hardware sector protection feature disables both program and erase operations in any combination of the sectors of memory. this can be achieved in-system or via pro- gramming equipment. the erase suspend feature enables the user to put erase on hold for any period of time to read data from, or program data to, any sector that is not selected for erasure. true background erase can thus be achieved. the hardware reset# pin terminates any operation in progress and resets the internal state machine to reading array data. the reset# pin may be tied to the system reset circuitry. a system reset would thus also reset the device, enabling the system microprocessor to read the boot-up firmware from the flash memory. the device offers two power-saving features. when addresses have been stable for a specified amount of time, the device enters the automatic sleep mode . the system can also place the device into the standby mode . power consumption is greatly reduced in both these modes. amd ? s flash technology combines years of flash memory manufacturing experience to produce the highest levels of quality, reliability and cost effective- ness. the device electrically erases all bits within a sector simultaneously via fowler-nordheim tun- neling. the data is programmed using hot electron injec- tion. electrical specifications refer to the am29lv800b data sheet, publication number 21490, for full electrical specifications on the am29lv800b in kgd form.
am29lv800b known good die 3 supplement product selector guide die photograph die pad locations family part number am29lv800b kgd speed option (v cc = 2.7 ? 3.6 v) -80 -90 -120 max access time, t acc (ns) 80 90 120 max ce# access, t ce (ns) 80 90 120 max oe# access, t oe (ns) 30 35 50 10 11 12 35 34 33 21 24 9 8 7 6 5 4 3 2 1 4443424140393837 36 20 19 18 17 16 15 14 13 32 31 30 29 28 27 26 25 23 22 amd logo location
4 am29lv800b known good die supplement pad description pads relative to die center. note: the coordinates above are relative to the die center and can be used to operate wire bonding equipment. pad signal pad center (mils) pad center (millimeters) xyxy 1v cc ? 0.90 127.50 ? 0.02 3.24 2dq4 ? 13.00 127.50 ? 0.33 3.24 3dq12 ? 18.90 127.50 ? 0.48 3.24 4dq5 ? 24.80 127.50 ? 0.63 3.24 5dq13 ? 30.70 127.50 ? 0.78 3.24 6dq6 ? 36.50 127.50 ? 0.93 3.24 7dq14 ? 42.40 127.50 ? 1.08 3.24 8dq7 ? 48.30 127.50 ? 1.23 3.24 9dq15/a ? 1 ? 54.20 127.50 ? 1.38 3.24 10 v ss ? 63.60 125.90 ? 1.62 3.20 11 byte# ? 63.60 115.80 ? 1.62 2.94 12 a16 ? 63.60 105.70 ? 1.62 2.68 13 a15 ? 63.30 ? 126.00 ? 1.61 ? 3.20 14 a14 ? 57.40 ? 126.00 ? 1.46 ? 3.20 15 a13 ? 52.00 ? 126.00 ? 1.32 ? 3.20 16 a12 ? 46.20 ? 126.00 ? 1.17 ? 3.20 17 a11 ? 40.70 ? 126.00 ? 1.03 ? 3.20 18 a10 ? 34.90 ? 126.00 ? 0.89 ? 3.20 19 a9 ? 29.50 ? 125.80 ? 0.75 ? 3.20 20 a8 ? 23.60 ? 126.00 ? 0.60 ? 3.20 21 we# ? 18.10 ? 126.00 ? 0.46 ? 3.20 22 reset# ? 8.60 ? 129.80 ? 0.22 ? 3.30 23 ry/by# 8.70 ? 129.80 0.22 ? 3.30 24 a18 18.20 ? 126.00 0.46 ? 3.20 25 a17 23.70 ? 126.00 0.60 ? 3.20 26 a7 29.50 ? 126.00 0.75 ? 3.20 27 a6 34.90 ? 126.00 0.89 ? 3.20 28 a5 40.70 ? 126.00 1.03 ? 3.20 29 a4 46.20 ? 126.00 1.17 ? 3.20 30 a3 52.00 ? 126.00 1.32 ? 3.20 31 a2 57.40 ? 126.00 1.46 ? 3.20 32 a1 63.30 ? 126.00 1.61 ? 3.20 33 a0 63.60 105.50 1.62 2.68 34 ce# 63.60 115.60 1.62 2.94 35 v ss 63.60 125.70 1.62 3.19 36 oe# 54.20 129.60 1.38 3.29 37 dq0 46.60 127.50 1.18 3.24 38 dq8 40.70 127.50 1.03 3.24 39 dq1 34.90 127.50 0.89 3.24 40 dq9 28.90 127.50 0.73 3.24 41 dq2 23.10 127.50 0.59 3.24 42 dq10 17.20 127.50 0.44 3.24 43 dq3 11.40 127.50 0.29 3.24 44 dq11 5.40 127.50 0.14 3.24
am29lv800b known good die 5 supplement pad description pads relative to v cc . note: the coordinates above are relative to the center of pad 1 and can be used to operate wire bonding equipment. pad signal pad center (mils) pad center (millimeters) xyxy 1v cc 0.00 0.00 0.0000 0.0000 2dq4 ? 12.10 0.00 ? 0.3073 0.0000 3dq12 ? 18.00 0.00 ? 0.4572 0.0000 4dq5 ? 23.90 0.00 ? 0.6071 0.0000 5dq13 ? 29.80 0.00 ? 0.7569 0.0000 6dq6 ? 35.60 0.00 ? 0.9042 0.0000 7dq14 ? 41.50 0.00 ? 1.0541 0.0000 8dq7 ? 47.40 0.00 ? 1.2040 0.0000 9dq15/a ? 1 ? 53.30 0.00 ? 1.3538 0.0000 10 v ss ? 62.70 ? 1.60 ? 1.5926 ? 0.0406 11 byte# ? 62.70 ? 11.70 ? 1.5926 ? 0.2972 12 a16 ? 62.70 ? 21.80 ? 1.5926 ? 0.5537 13 a15 ? 62.40 ? 253.50 ? 1.5850 ? 6.4389 14 a14 ? 56.50 ? 253.50 ? 1.4351 ? 6.4389 15 a13 ? 51.10 ? 253.50 ? 1.2979 ? 6.4389 16 a12 ? 45.30 ? 253.50 ? 1.1506 ? 6.4389 17 a11 ? 39.80 ? 253.50 ? 1.0109 ? 6.4389 18 a10 ? 34.00 ? 253.50 ? 0.8636 ? 6.4389 19 a9 ? 28.60 ? 253.30 ? 0.7264 ? 6.4338 20 a8 ? 22.70 ? 253.50 ? 0.5766 ? 6.4389 21 we# ? 17.20 ? 253.50 ? 0.4369 ? 6.4389 22 reset# ? 7.70 ? 257.30 ? 0.1956 ? 6.5354 23 ry/by# 9.60 ? 257.30 0.2438 ? 6.5354 24 a18 19.10 ? 253.50 0.4851 ? 6.4389 25 a17 24.60 ? 253.50 0.6248 ? 6.4389 26 a7 30.40 ? 253.50 0.7722 ? 6.4389 27 a6 35.80 ? 253.50 0.9093 ? 6.4389 28 a5 41.60 ? 253.50 1.0566 ? 6.4389 29 a4 47.10 ? 253.50 1.1963 ? 6.4389 30 a3 52.90 ? 253.50 1.3437 ? 6.4389 31 a2 58.30 ? 253.50 1.4808 ? 6.4389 32 a1 64.20 ? 253.50 1.6307 ? 6.4389 33 a0 64.50 ? 22.00 1.6383 ? 0.5588 34 ce# 64.50 ? 11.90 1.6383 ? 0.3023 35 v ss 64.50 ? 1.80 1.6383 ? 0.0457 36 oe# 55.10 2.10 1.3995 0.0533 37 dq0 47.50 0.00 1.2065 0.0000 38 dq8 41.60 0.00 1.0566 0.0000 39 dq1 35.80 0.00 0.9093 0.0000 40 dq9 29.80 0.00 0.7569 0.0000 41 dq2 24.00 0.00 0.6096 0.0000 42 dq10 18.10 0.00 0.4597 0.0000 43 dq3 12.30 0.00 0.3124 0.0000 44 dq11 6.30 0.00 0.1600 0.0000
6 am29lv800b known good die supplement ordering information standard products amd standard products are available in several packages and operating ranges. the order number (valid combination) is formed by a combination of the following: valid combinations valid combinations list configurations planned to be sup- ported in volume for this device. consult the local amd sales office to confirm availability of specific valid combinations and to check on newly released combinations. am29lv800b t -80 dp c 2 die revision this number refers to the specific amd manufacturing process and product technology reflected in this document. it is entered in the revision field of amd standard product nomenclature. temperature range c=commercial (0 c to +70 c) i = industrial ( ? 40 c to +85 c) package type and minimum order quantity dp = waffle pack 140 die per 5 tray stack dg = gel-pak ? die tray 462 die per 6 tray stack dt = surftape ? (tape and reel) 2500 per 7-inch reel dw = gel-pak ? wafer tray (sawn wafer on frame) call amd sales office for minimum order quantity speed option see product selector guide and valid combinations boot code sector architecture t = top sector b = bottom sector device number/description am29lv800b known good die 8 megabit (1 m x 8-bit/512 k x 16-bit) cmos flash memory ? die revision 2 3.0 volt-only program and erase valid combinations am29lv800bt-80 am29lv800bb-80 dpc 2, dpi 2, dgc 2, dgi 2, dtc 2, dti 2, dwc 2, dwi 2 am29lv800bt-90 am29lv800bb-90 am29lv800bt-120 am29lv800bb-120
am29lv800b known good die 7 supplement packaging information surftape packaging gel-pak and waffle pack packaging direction of feed orientation relative to leading edge of tape and reel 16 mm amd logo location orientation relative to top left corner of gel-pak and waffle pack cavity plate amd logo location
8 am29lv800b known good die supplement product test flow figure 1 provides an overview of amd ? s known good die test flow. for more detailed information, refer to the am29lv800b product qualification database supple- ment for kgd. amd implements quality assurance pro- cedures throughout the product test flow. in addition, an off-line quality monitoring program (qmp) further guarantees amd quality standards are met on known good die products. these qa procedures also allow amd to produce kgd products without requiring or implementing burn-in. figure 1. amd kgd product test flow wafer sort 1 bake 24 hours at 250 c wafer sort 2 wafer sort 3 high temperature packaging for shipment shipment dc parameters functionality programmability erasability data retention dc parameters functionality programmability erasability dc parameters functionality programmability erasability speed incoming inspection wafer saw die separation 100% visual inspection die pack
am29lv800b known good die 9 supplement physical specifications die dimensions . . . . . . . . . . . . . . 140 mils x 279 mils . . . . . . . . . . . . . . . . . . . . . . . . . . 3.56 mm x 7.09 mm die thickness . . . . . . . . . . . . . . . . . . . . . . . . .500 m bond pad size . . . . . . . . . . . . . . 4.69 mils x 4.69 mils . . . . . . . . . . . . . . . . . . . . . . . . . . 115.9 m x 115.9 m pad area free of passivation . . . . . . . . . .13.99 mils 2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9,025 m 2 pads per die . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .44 bond pad metalization . . . . . . . . . . . . . . . . . . . . al/cu die backside . . . . . . . . . . . . . . . . . . . . . . . . no metal, may be grounded (optional) passivation. . . . . . . . . . . . . . . . . . nitride/sog/nitride dc operating conditions v cc (supply voltage) . . . . . . . . . . . . . . . 2.7 v to 3.6 v operating temperature commercial . . . . . . . . . . . . . . . . . . . 0 c to +70 c industrial . . . . . . . . . . . . . . . . . . . ? 40 c to +85 c manufacturing information manufacturing . . . . . . . . . . . . . . . . . . . . . . . . . . . fasl test . . . . . . . . . . . . . . . . . . . . . . . penang, malaysia manufacturing id (top boot) . . . . . . . . . . . . 98h02ak (bottom boot). . . . . . . . 98h02abk preparation for shipment . . . . . . . . penang, malaysia fabrication process . . . . . . . . . . . . . . . . . . . . cs39s die revision . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 special handling instructions processing do not expose kgd products to ultraviolet light or process them at temperatures greater than 250 c. failure to adhere to these handling instructions will result in irreparable damage to the devices. for best yield, amd recommends assembly in a class 10k clean room with 30% to 60% relative humidity. storage store at a maximum temperature of 30 c in a nitrogen- purged cabinet or vacuum-sealed bag. observe all standard esd handling procedures.
10 am29lv800b known good die supplement terms and conditions of sale for amd non-volatile memory die all transactions relating to unpackaged die under this agreement shall be subject to amd ? s standard terms and conditions of sale, or any revisions thereof, which revisions amd reserves the right to make at any time and from time to time. in the event of conflict between the provisions of amd ? s standard terms and conditions of sale and this agreement, the terms of this agreement shall be controlling. amd warrants unpackaged die of its manufacture ( ? known good die ? or ? die ? ) against defective mate- rials or workmanship for a period of one (1) year from date of shipment. this warranty does not extend beyond the first purchaser of said die. buyer assumes full responsibility to ensure compliance with the appropriate handling, assembly and processing of known good die (including but not limited to proper die preparation, die attach, wire bonding and related assembly and test activities), and compliance with all guidelines set forth in amd ? s specifications for known good die, and amd assumes no responsibility for environmental effects on known good die or for any activity of buyer or a third party that damages the die due to improper use, abuse, negligence, improper installation, accident, loss, damage in transit, or unau- thorized repair or alteration by a person or entity other than amd ( ? warranty exclusions ? ). the liability of amd under this warranty is limited, at amd ? s option, solely to repair the die, to send replace- ment die, or to make an appropriate credit adjustment or refund in an amount not to exceed the original pur- chase price actually paid for the die returned to amd, provided that: (a) amd is promptly notified by buyer in writing during the applicable warranty period of any defect or nonconformity in the known good die; (b) buyer obtains authorization from amd to return the defective die; (c) the defective die is returned to amd by buyer in accordance with amd ? s shipping instruc- tions set forth below; and (d) buyer shows to amd ? s satisfaction that such alleged defect or nonconformity actually exists and was not caused by any of the above-referenced warranty exclusions. buyer shall ship such defective die to amd via amd ? s carrier, col- lect. risk of loss will transfer to amd when the defec- tive die is provided to amd ? s carrier. if buyer fails to adhere to these warranty returns guidelines, buyer shall assume all risk of loss and shall pay for all freight to amd ? s specified location. the aforementioned pro- visions do not extend the original warranty period of any known good die that has either been repaired or replaced by amd. without limiting the foregoing, except to the extent that amd expressly warrants to buyer in a separate agreement signed by amd, amd makes no warranty with respect to the die ? s processing of date data, and shall have no liability for damages of any kind, under equity, law, or any other theory, due to the failure of such known good die to process any par- ticular data containing dates, including dates in and after the year 2000, whether or not amd received notice of the possi- bility of such damages. this warranty is expressed in lieu of all other warranties, expressed or implied, including the implied warranty of fitness for a particular purpose, the implied warranty of merchantability and of all other obligations or liabilities on amd ? s part, and it neither assumes nor autho- rizes any other person to assume for amd any other liabilities. the foregoing constitutes the buyer ? s sole and exclu- sive remedy for the furnishing of defec- tive or non conforming known good die and amd shall not in any event be liable for increased manufacturing costs, downtime costs, damages relating to buyer ? s procurement of substitute die (i.e., ? cost of cover ? ), loss of profits, rev- enues or goodwill, loss of use of or damage to any associated equipment, or any other indirect, incidental, special or consequential damages by reason of the fact that such known good die shall have been determined to be defective or non conforming. buyer agrees that it will make no warranty representa- tions to its customers which exceed those given by amd to buyer unless and until buyer shall agree to indemnify amd in writing for any claims which exceed amd ? s warranty. known good die are not designed or authorized for use as components in life support appliances, devices or systems where malfunction of the die can reason- ably be expected to result in a personal injury. buyer ? s use of known good die for use in life support applica- tions is at buyer ? s own risk and buyer agrees to fully indemnify amd for any damages resulting in such use or sale.
am29lv800b known good die 11 supplement revision summary revision a (march 1997) initial release. revision b (january 1998) formatted to match current template. updated distinc- tive characteristics and general description sections using the current main data sheet. updated for cs39 process technology. revision b+1 (march 1998) distinctive characteristics changed read and program/erase current to match data sheet. pad description corrected signal names for pads 13 ? 44. replaced values for all pad coordinates. revision c (november 1998) die photograph, pad description, ordering information, physical specifications, manufacturing information updated for cs39s process technology. ordering information changed waffle pack quantity to 140. changed valid combinations to reflect die revision 2. terms and conditions replaced warranty with new version. revision d (december 1998) packaging information added section. moved orientation information from die photograph into this section. revision d+1 (june 14, 1999) physical specifications corrected the bond pad dimensions. deleted si from the bond pad metalization specification. revision d+2 (july 2, 1999) ordering information the quantities for each packaging type is now listed. contacting amd for this information is no longer required. revision e (march 12, 2002) global added 80 ns speed. pad description added table of pad locations relative to die center. manufacturing information changed test facility to penang, malaysia (acn2016). trademarks copyright ? 2002 advanced micro devices, inc. all rights reserved. amd, the amd logo, and combinations thereof are registered trademarks of advanced micro devices, inc. product names used in this publication are for identification purposes only and may be trademarks of their respective companies .

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